| PART |
Description |
Maker |
| MBRB2545CT |
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance
|
Sangdest Microelectroni...
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| NRC04J472TRF NRC01ZO NRC02 NRC02ZO NRC06F2741TRF N |
Thick Film Chip Resistors
DOUBLE GLASS OVERCOAT ASSURES STRONG MECHANICAL ..CONTRUCTION AND LONG LIFE, NICKEL BARRIER PREVENTS LEACHING
METAL GLAZED THICK FILM ON HIGH PURITY ALUMINA SUBSTRATE ..(CERMET) PROVIDES UNIFORM QUALITY AND HIGH RELIABILITY
|
NIC-Components Corp.
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| 125293U020AJ1B 125114U005AJ1B 125114U6R3AC1B 12523 |
The Pace-Setter for Long Life and High Temperature
Type 125 -55 篓卢C to 125 篓卢C, Ultra-High Temperature, Military Grade
Type 125 -55 潞C to 125 潞C, Ultra-High Temperature, Military Grade
Type 125 -55 oC to 125 oC, Ultra-High Temperature, Military Grade
Type 125 -55 ìC to 125 ìC, Ultra-High Temperature, Military Grade
|
Cornell Dubilier Electr...
List of Unclassifed Man...
ETC
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Cornell Dubilier Electronics
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| HVS2512 HVS1210 HVS4020 HVS1206 |
High Voltage / High Temperature Thick Film Chip Resistors
|
Riedon Powertron
|
| TSIC-506 |
High Resolution, High Precision, Rapid Response Temperature Sensor IC
|
Zentrum Mikroelektronik Dresden AG
|
| LT6107 LT6107MPS5-TR LT6107MPS5-TRM LT6107MPS5-TRM |
High Temperature High Side Current Sense Amp in SOT-23
|
Linear Technology
|
| TMPG06-10 TMPG06-10A TMPG06-11 TMPG06-11A TMPG06-1 |
Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions
|
Vishay Siliconix
|
| 32209340 32209341 32209345 |
MR series elements are designed for applications where high vibration resistance as well as high temperature stability are vital
|
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| TPSMA6.8AHE35AT TPSMA39A TPSMA36A TPSMA10 TPSMA6.8 |
Surface Mount Automotive Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions
|
Vishay Siliconix
|
| 3KASMC10AHE3/9AT 3KASMC10AHE3/57T 3KASMC24A |
Surface Mount Automotive Transient Voltage Suppressors (High Temperature Stability & High Reliability Conditions)
|
Vishay Siliconix
http://
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